Time Evolution of Single-Event Burnout in Vertical Power MOSFETs and Implications for Mitigation Strategies-Reference-Cited by-同舟云学术

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Time Evolution of Single-Event Burnout in Vertical Power MOSFETs and Implications for Mitigation Strategies

Published:2011-03 Issue:1 Volume:11 Page:171-178
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Romero Eduardo,Demarco Gustavo Luis,Tais Carlos E.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/7298/5729994/05677453.pdf?arnumber=5677453

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Machine learning based prediction model for single event burnout hardening design of power MOSFETs;Microelectronics Journal;2023-09

2. A Comparative Study on Heavy-Ion Irradiation Impact on p-Channel and n-Channel Power UMOSFETs;IEEE Transactions on Nuclear Science;2022-06

3. Research of Single-Event Burnout in Floating Field Ring Termination of Power MOSFETs;IEEE Transactions on Electron Devices;2017-07

4. Prediction Methodology for Proton Single Event Burnout: Application to a STRIPFET Device;IEEE Transactions on Nuclear Science;2015-12

5. 3D Thermal and Mechanical Analysis of a Single Event Burnout;IEEE Transactions on Nuclear Science;2015-08

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