Photoacoustic and OBIC measurements on planar high-voltage p/sup +/-n junctions
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/385/00007373.pdf?arnumber=7373
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. In-Operando Spatial Imaging of Edge Termination Electric Fields in GaN Vertical p-n Junction Diodes;IEEE Electron Device Letters;2016
2. Back side optical beam induced current method for the localization of electric field enhancements in edge termination structures of power semiconductor devices;Microelectronics Reliability;2000-08
3. OBIC measurements on planar high voltage p+-n junctions with diamond-like carbon films as passivation layer;Diamond and Related Materials;1993-04
4. OBIC measurements on planar high-voltage p+ -n junctions with diamond-like carbon films as passivation layer;Applied Surface Science;1993-03
5. LIMITATIONS AND FURTHER DEVELOPMENT OF BEAM INJECTION METHODS. A SYNTHESIS;Le Journal de Physique IV;1991-12
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