A study for achieving high power and efficiency based on high bias operation in C- and X-band GaN power amplifiers-Reference-Cited by-同舟云学术

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A study for achieving high power and efficiency based on high bias operation in C- and X-band GaN power amplifiers

Published:2018-01 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR)
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Author:

Formicone G.,Burger J.,Custer J.,Keshishian R.,Veitschegger W.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8305322/8310000/08310062.pdf?arnumber=8310062

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Development of Parallel RF Power Amplifier Using GaN HEMT with Independent Biasing Circuits for Wireless Communication;2024 IEEE International Black Sea Conference on Communications and Networking (BlackSeaCom);2024-06-24

2. ANALISIS KINERJA RF POWER AMPLIFIER PADA FREKUENSI 3 GHz UNTUK APLIKASI RADAR CC-OFDM-MIMO;Transmisi: Jurnal Ilmiah Teknik Elektro;2024-01-30

3. Bias Tee Design for RF Power Amplifiers and GaN FETs Characterization;2023 IEEE MTT-S Latin America Microwave Conference (LAMC);2023-12-06

4. A Dual-band Radio Frequency Power Amplifier Suitable for both Daily and Industrial Communication;2023 3rd International Conference on Electronic Information Engineering and Computer (EIECT);2023-11-17

5. Implementation of a 50 W Power Amplifier for K-Band;2023 IEEE 7th International Symposium on Electromagnetic Compatibility (ISEMC);2023-10-20

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