Subthreshold Behavior of Floating-Gate MOSFETs With Ferroelectric Capacitors-Reference-Cited by-同舟云学术

Subthreshold Behavior of Floating-Gate MOSFETs With Ferroelectric Capacitors

Published:2018-10 Issue:10 Volume:65 Page:4641-4645
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Han Qinghua^ORCID,Tromm Thomas C. U.,Hoffmann Michael^ORCID,Aleksa Paulus,Schroeder Uwe^ORCID,Schubert Juergen^ORCID,Mantl Siegfried^ORCID,Zhao Qing-Tai^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/8469117/08438525.pdf?arnumber=8438525

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