Hard-Switching Losses in Power FETs: the Role of Output Capacitance

Author:

Perera Nirmana,Jafari Armin,Soleiman Zadeh Ardebili Reza,Bollier Nicolas,Abeyratne Sunil Gamini,Matioli Elison

Funder

Bundesamt fr Energie

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. In-Chip Microfluidic Cooling Integrated on GaN Power IC Reaching High Power Density of 78 kW/l;IEEE Transactions on Power Electronics;2024-08

2. Evaluation of GaN HEMT dv/dt Immunity and dv/dt Induced False Turn-On Energy Loss;2024 IEEE Applied Power Electronics Conference and Exposition (APEC);2024-02-25

3. Over-voltage and cross-conduction hard switching stress on schottky gate-type p-GaN HEMT in half-bridge operation. Experimental and physical approaches;Microelectronics Reliability;2023-11

4. Hard-Switching Loss Calculation Model For Fast-Switching GaN HEMT in Half-Bridge Circuit;IECON 2023- 49th Annual Conference of the IEEE Industrial Electronics Society;2023-10-16

5. Switching losses in power devices: From dynamic on resistance to output capacitance hysteresis;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04

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