Over-voltage and cross-conduction hard switching stress on schottky gate-type p-GaN HEMT in half-bridge operation. Experimental and physical approaches-Reference-Cited by-同舟云学术

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Over-voltage and cross-conduction hard switching stress on schottky gate-type p-GaN HEMT in half-bridge operation. Experimental and physical approaches

Published:2023-11 Issue: Volume:150 Page:115172
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Ghizzo L.,Trémouilles D.,Richardeau F.,Vinnac S.,Jamin F.,Guibaud G.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Hot electron effects in AlGaN/GaN HEMTs during hard-switching events;Minetto,2021

2. Evidence of hot-electron effects during hard switching of AlGaN/GaN HEMTs;Rossetto;IEEE Trans. Electron Devices,2017

3. Hard-switching losses in power FETs: the role of output capacitance;Perera;IEEE Trans. Power Electron.,2022

4. A simple equation for the energy stored by voltage-dependent capacitances;Jadli;IEEE Trans. Power Electron.,2020

5. On the channel hot-electron’s interaction with C-doped GaN buffer and resultant gate degradation in AlGaN/GaN HEMTs;Chaudhuri;IEEE Trans. Electron Devices,2021

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