Physics-Based SPICE Modeling of Dynamic on-State Resistance of p-GaN HEMTs-Reference-Cited by-同舟云学术

Physics-Based SPICE Modeling of Dynamic on-State Resistance of p-GaN HEMTs

Published:2023-07 Issue:7 Volume:38 Page:7988-7992
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Li Sheng¹^ORCID,Ma Yanfeng¹^ORCID,Zhang Chi¹,Lu Weihao¹,Liu Mengli¹,Li Mingfei¹,Yang Lanlan²^ORCID,Liu Siyang¹^ORCID,Wei Jiaxing¹^ORCID,Zhang Long¹^ORCID,Sun Weifeng¹^ORCID,Sun Jiaxin³^ORCID

Affiliation:

1. National ASIC System Engineer Research Center, Southeast University, Nanjing, China

2. National Center of Technology Innovation for EDA, Southeast University, Nanjing, China

3. Julin Tech. Co. Ltd., Shanghai, China

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Key Research Program of Jiangsu Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/10130046/10086699.pdf?arnumber=10086699

Reference21 articles.

1. A GaN-HEMT Compact Model Including Dynamic RDSon Effect for Power Electronics Converters

2. Modelling and quantification of power losses due to dynamic on-state resistance of GaN E-mode HEMT

3. Design of a Fast Dynamic On-Resistance Measurement Circuit for GaN Power HEMTs

4. Characterisation and Modeling of Gallium Nitride Power Semiconductor Devices Dynamic On-State Resistance

5. Effects of Deep Trapping States at High Temperatures on Transient Performance of AlGaN/GaN Heterostructure Field-Effect Transistors

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2. Device Model and Energy Loss Mechanism of Enhancement-Mode p-GaN HEMTs Under Unclamped-Inductive-Switching Stress;IEEE Transactions on Electron Devices;2024-07

3. Aging Reliability Compact Modeling of Trap Effects in Power GaN HEMTs;IEEE Transactions on Device and Materials Reliability;2024-06

4. Reverse Blocking Enhancement‐Mode AlGaN/GaN HEMTs with Hybrid p‐GaN Ohmic Drain on the Si Substrates;physica status solidi (a);2023-12-03

5. Small-Signal Modeling of GaN-on-Diamond HEMT Using ANFIS Method;2023 International Symposium on Networks, Computers and Communications (ISNCC);2023-10-23