Enhanced Power Conversion Capability of Class-E Power Amplifiers With GaN HEMT Based on Cross-Quadrant Operation
Author:
Affiliation:
1. School of Electrical Engineering, Xi’an Jiaotong University, Xi’an, China
Funder
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/9837805/09802785.pdf?arnumber=9802785
Reference34 articles.
1. On the Optimization of a Class-E Power Amplifier With GaN HEMTs at Megahertz Operation
2. An Accurate Datasheet-Based Full-Characteristics Analytical Model of GaN HEMTs for Deadtime Optimization
3. High Frequency MOSFET Gate Drivers: Technologies and Applications
4. Three-Level Gate Drivers for eGaN HEMTs in Resonant Converters
5. Review of very high frequency power converters and related technologies
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