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Online Gate-Oxide Degradation Monitoring of Planar SiC MOSFETs Based on Gate Charge Time

  • Published:2022-06 Issue:6 Volume:37 Page:7333-7343
  • ISSN:0885-8993
  • Container-title:IEEE Transactions on Power Electronics
  • language:
  • Short-container-title:IEEE Trans. Power Electron.

Author:

Xie MinghangORCID,Sun PengjuORCID,Wang KaihongORCID,Luo QuanmingORCID,Du XiongORCID

Funder

National Science Foundation of China for Distinguished Young Scholars

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Short-Circuit Events on the Threshold Voltage Instability of SiC MOSFETs;2023 IEEE 2nd International Power Electronics and Application Symposium (PEAS);2023-11-10

2. Online Gate-Oxide Degradation Monitoring of SiC MOSFETs Based on Parasitic Capacitance Aging Characteristics;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

3. An Approach for Online Estimation of On-State Resistance in SiC MOSFETs Without Current Measurement;IEEE Transactions on Power Electronics;2023-09

4. An Online Gate Oxide Degradation Monitoring Method for SiC MOSFETs With Contactless PCB Rogowski Coil Approach;IEEE Transactions on Power Electronics;2023-08

5. A Half-Bridge-Level Gate-Oxide Failure Online Detection Method Without Invading Converters for SiC MOSFETs;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023-06
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