Junction-to-Case Thermal Resistance Measurement and Analysis of Press-Pack IGBTs Under Double-Side Cooling Condition-Reference-Cited by-同舟云学术

Junction-to-Case Thermal Resistance Measurement and Analysis of Press-Pack IGBTs Under Double-Side Cooling Condition

Published:2022-07 Issue:7 Volume:37 Page:8543-8553
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Chen Jie¹^ORCID,Deng Erping¹^ORCID,Zhang Yiming¹,Huang Yongzhang¹

Affiliation:

1. State Key Laboratory of Alternate Electrical Power System With Renewable Energy Sources, North China Electric Power University, Beijing, China

Funder

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/9743201/09714010.pdf?arnumber=9714010

Reference26 articles.

1. Using the chip as a temperature sensor — The influence of steep lateral temperature gradients on the Vce(T)-measurement;schmidt;Proc 13th Eur Conf Power Electron Appl,2009

2. Transient dual interface measurement — A new JEDEC standard for the measurement of the junction-to-case thermal resistance

3. Temperature Influence on the Accuracy of the Transient Dual Interface Method for the Junction-to-Case Thermal Resistance Measurement

4. Study on the Method to Measure the Junction-to-Case Thermal Resistance of Press-Pack IGBTs

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