Degradation Analysis of Planar, Symmetrical and Asymmetrical Trench SiC MOSFETs Under Repetitive Short Circuit Impulses-Reference-Cited by-同舟云学术

Degradation Analysis of Planar, Symmetrical and Asymmetrical Trench SiC MOSFETs Under Repetitive Short Circuit Impulses

Published:2023-09 Issue:9 Volume:38 Page:10933-10946
ISSN:0885-8993
Container-title:IEEE Transactions on Power Electronics
language:
Short-container-title:IEEE Trans. Power Electron.

Author:

Yu Renze¹^ORCID,Jahdi Saeed¹^ORCID,Mellor Phil¹^ORCID,Liu Li¹^ORCID,Yang Juefei¹^ORCID,Shen Chengjun¹^ORCID,Alatise Olayiwola²^ORCID,Ortiz-Gonzalez Jose²^ORCID

Affiliation:

1. Department of Electrical Engineering, Electrical Energy Management Group, University of Bristol, Bristol, U.K.

2. School of Engineering, University of Warwick, Coventry, U.K.

Funder

U.K. Engineering and Physical Research Council

Supergen Energy Networks Hub initiative

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/63/10197471/10167792.pdf?arnumber=10167792

Reference40 articles.

1. Repetitive short circuit capability of SiC MOSFET at specific low gate-source voltage bias for more robust extreme operation

2. A Comprehensive Study of Short-Circuit Ruggedness of Silicon Carbide Power MOSFETs

3. Trap Analysis Based on Low-Frequency Noise for SiC Power MOSFETs Under Repetitive Short-Circuit Stress

4. Investigation of Off-State Stress Induced Degradation of SiC MOSFETs Under Short-Circuit Condition

5. Degradation Assessment of SiC MOSFETs under the Repetitive Short Circuit Ageing with Different Gate-Source Voltage Bias

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