C-RC Snubber Optimization Design for Improving Switching Characteristics of SiC MOSFET
Author:
Affiliation:
1. College of Electrical and Information Engineering, Hunan University, Changsha, China
Funder
National Natural Science Foundation of China
Huxiang High-level Talents Gathering Project
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/9803836/09789434.pdf?arnumber=9789434
Reference37 articles.
1. Achieving Zero Switching Loss in Silicon Carbide MOSFET
2. Impedance-Oriented Transient Instability Modeling of SiC mosfet Intruded by Measurement Probes
3. Characterization and Extraction of Power Loop Stray Inductance With SiC Half-Bridge Power Module
4. A New Characterization Technique for Extracting Parasitic Inductances of SiC Power MOSFETs in Discrete and Module Packages Based on Two-Port S-Parameters Measurement
5. Improved simulation modeling and its verification for SiC MOSFET;yang;IET Power Electron,2022
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