Active Gate Driver With Turn-off Delay Control for Voltage Balancing of Series–Connected SiC MOSFETs
Author:
Affiliation:
1. Sungshin Electric Company, Suwon, South Korea
2. Department of Electrical and Electronics Engineering, Konkuk University, Seoul, South Korea
3. Virginia Polytechnic Institute and State University, Blacksburg, VA, USA
Funder
Konkuk University
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/63/9970584/09816110.pdf?arnumber=9816110
Reference35 articles.
1. Diode Evaluation and Series Diode Balancing for High-Voltage High-Frequency Power Converters
2. Characterization and Experimental Assessment of the Effects of Parasitic Elements on the MOSFET Switching Performance
3. Voltage Balancing of Four Series-Connected SiC MOSFETs under 2 kV Bus Voltage using Active dv/dt Control
4. Impact of $RC$ Snubber on Switching Oscillation Damping of SiC MOSFET With Analytical Model
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1. A Control Strategy for Reducing Voltage Ripples in Series-Connected SiC MOSFETs Using Active Clamping Modules in High Power VSCs;IEEE Transactions on Power Electronics;2024-10
2. Gate driver, snubber and circuit design considerations for fast‐switching series‐connected SiC MOSFETs;IET Power Electronics;2024-07-05
3. Active Voltage Balancing With Seamless Integration Into Dual Gate Driver for Series Connection of SiC Mosfets;IEEE Transactions on Power Electronics;2024-06
4. A Dual-Channel Gate Driver Design with Active Voltage Balancing Circuit for Series Connection of SiC MOSFETs;2024 IEEE 10th International Power Electronics and Motion Control Conference (IPEMC2024-ECCE Asia);2024-05-17
5. Advanced voltage balancing techniques for series-connected SiC-MOSFET devices: A comprehensive survey;Power Electronic Devices and Components;2024-04
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