Wideband high power GaN on SiC SPDT switch MMICs-Reference-Cited by-同舟云学术

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Wideband high power GaN on SiC SPDT switch MMICs

Published:2010-05 Issue: Volume: Page:
ISSN:
Container-title:2010 IEEE MTT-S International Microwave Symposium
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Author:

Campbell Charles F.,Dumka Deep C.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5503841/5514662/05517940.pdf?arnumber=5517940

Cited by 37 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Large-Signal SPICE Model for a Dual-Gate GaN RF Switch With OFF-State Harmonic Control;IEEE Transactions on Electron Devices;2024-01

2. Compact Multipole GaN-on-Si SPDT Switch Using Inductive Parasitic Effects of Hybrid HEMT Devices;IEEE Transactions on Microwave Theory and Techniques;2023-11

3. A High-Power and Broadband GaN SPDT MMIC Switch Using Gate-Optimized HEMTs;IEEE Microwave and Wireless Technology Letters;2023-08

4. X-Band High Power GaN SPDT Switch MMIC for Space based Radar Front End;2023 IEEE Wireless Antenna and Microwave Symposium (WAMS);2023-06-07

5. Electronic metadevices for terahertz applications;Nature;2023-02-15

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