A 110 GHz LNA with 20dB gain and 4dB noise figure in an 0.13μm SiGe BiCMOS technology-Reference-Cited by-同舟云学术

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A 110 GHz LNA with 20dB gain and 4dB noise figure in an 0.13μm SiGe BiCMOS technology

Published:2013-06 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE MTT-S International Microwave Symposium Digest (MTT)
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Author:

Ulusoy A. Cagri,Kaynak Mehmet,Valenta Vaclav,Tillack Bernd,Schumacher Hermann

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6684335/6697324/06697456.pdf?arnumber=6697456

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. 6G Roadmap for Semiconductor Technologies: Challenges and Advances;2022 IEEE International Reliability Physics Symposium (IRPS);2022-03

3. A Broadband 70–110-GHz E-/W-Band LNA Using a 90-nm T-Gate GaN HEMT Technology;IEEE Microwave and Wireless Components Letters;2021-07

4. A Compact Low-Power 140-GHz Low-Noise Amplifier with 19-dB Gain and 7-dB NF;2021 IEEE International Symposium on Circuits and Systems (ISCAS);2021-05

5. An E-Band SiGe High Efficiency, High Harmonic Suppression Amplifier Multiplier Chain With Wide Temperature Operating Range;IEEE Transactions on Circuits and Systems I: Regular Papers;2021

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