Differentiated Silicon Technologies for mmwave 5G and 6G applications (Invited)
Author:
Affiliation:
1. GLOBALFOUNDRIES Inc., Smart Mobile Devices & Wearables,Santa Clara,California,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10117589/10117581/10117777.pdf?arnumber=10117777
Reference17 articles.
1. A 2-Channel 136-156 GHz Dual Down-Conversion I/Q Receiver with 30 dB Gain and 9.5 dB NF Using CMOS 22nm FDSOI
2. A 134-149 GHz IF Beamforming Phased-Array Receiver Channel with 6.4-7.5 dB NF Using CMOS 45nm RFSOI
3. A 110 GHz LNA with 20dB gain and 4dB noise figure in an 0.13μm SiGe BiCMOS technology
4. Key components of aD-band Dicke-radiometer in 90 nm SiGe BiCMOS technology;ben yishay;10th EuMIC Paris France,2015
5. A 110-to-130GHz SiGe BiCMOS Doherty Power Amplifier with Slotline-Based Power-Combining Technique Achieving >22dBm Saturated Output Power and> 10% Power Back-off Efficiency;li;IEEE ISSCC,2022
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 2×2 MIMO W-Band Millimeter Wireless Signal Delivery Employing CMA and MRC Technology;Journal of Lightwave Technology;2024-07-01
2. Realizing Joint Communication and Sensing RF Receiver Front-Ends: A Survey;IEEE Access;2024
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