Power GaAs MMICs for E-band communications applications
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/6842514/6847849/06848537.pdf?arnumber=6848537
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. On the Extraction of Accurate Non-Quasi-Static Transistor Models for E-Band Amplifier Design: Learning From the Past;IEEE Transactions on Microwave Theory and Techniques;2024-09
2. Design of a 60 GHz GaAs Enhancement-Mode pHEMT Power Amplifier MMIC with 28 dBm Output Power;The Journal of Korean Institute of Electromagnetic Engineering and Science;2023-02
3. A millimetre-wave GaAs monolithic multifunctional quadrupler chip with high harmonic rejection and high output power flatness;International Journal of Electronics Letters;2021-04-09
4. Single and Power-Combined Linear E-Band Power Amplifiers in 0.12-$\mu$ m SiGe With 19-dBm Average Power 1-GBaud 64-QAM Modulated Waveforms;IEEE Transactions on Microwave Theory and Techniques;2019-04
5. Lateral GaN Devices for Power Applications (from kHz to GHz);Power Electronics and Power Systems;2016-09-09
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