Stacked GaAs pHEMTs: Design of a K-band power amplifier and experimental characterization of mismatch effects-Reference-Cited by-同舟云学术

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Stacked GaAs pHEMTs: Design of a K-band power amplifier and experimental characterization of mismatch effects

Published:2015-05 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE MTT-S International Microwave Symposium
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Author:

Fersch T.,Quaglia R.,Pirola M.,Camarchia V.,Ramella C.,Khoshkholgh A. Javan,Ghione G.,Weigel R.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7155722/7166703/07166762.pdf?arnumber=7166762

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. TCAD-based Pseudo-Common-Gate X-PAR Model for GaAs Stacked Power Amplifier Design;2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC);2023-11-08

2. A Ku-Band Broadband Stacked FET Power Amplifier Using 0.15 μm GaAs pHEMT;Micromachines;2023-06-20

3. Compact GaN-based Stacked Cells for 5G Applications at 26 GHz;2022 Microwave Mediterranean Symposium (MMS);2022-05-09

4. Space-Compliant Design of a Millimeter-Wave GaN-on-Si Stacked Power Amplifier Cell through Electro-Magnetic and Thermal Simulations;Electronics;2021-07-26

5. A 18‐23 GHz power amplifier design using approximate optimal impedance region approach for satellite downlink;International Journal of RF and Microwave Computer-Aided Engineering;2021-04-12

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