A Beyond 110 GHz GaN Cascode Low-Noise Amplifier with 20.3 dBm Output Power

Author:

Weber Rainer1,Cwiklinski Maciej1,Wagner Sandrine1,Lozar Roger1,Massler Hermann1,Bruckner Peter1,Quay Rudiger1

Affiliation:

1. Fraunhofer Institute for Applied Solid State Physics IAF, Tullastr. 72, Freiburg, 79108, Germany

Publisher

IEEE

Cited by 20 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Improvement of Gate Length Dependence in Electrical Characteristics of AlGaN/GaN Dual-Gate HEMTs;IEEE Transactions on Electron Devices;2024-09

2. Robustness of GaN on SiC low‐noise amplifiers in common source and cascode configurations for X‐band applications;International Journal of Circuit Theory and Applications;2024-01-27

3. The Evolution of Applications, Hardware Design, and Channel Modeling for Terahertz (THz) Band Communications and Sensing: Ready for 6G?;Proceedings of the IEEE;2024

4. 120 GHz microstrip power amplifier MMICs in a commercial GaAs process;International Journal of Microwave and Wireless Technologies;2023-11-21

5. Adaptable 40 nm GaN T-Gate MMIC Processes for Millimeter-Wave Applications;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16

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