120 GHz microstrip power amplifier MMICs in a commercial GaAs process-Reference-Cited by-同舟云学术

120 GHz microstrip power amplifier MMICs in a commercial GaAs process

Published:2023-11-21 Issue: Volume: Page:1-8
ISSN:1759-0787
Container-title:International Journal of Microwave and Wireless Technologies
language:en
Short-container-title:Int. J. Microw. Wireless Technol.

Author:

Mahon Simon J.^ORCID,McCulloch MacCrae G.^ORCID,Mihaljevic Jakov^ORCID,Gorman Melissa C.^ORCID,Parker Anthony E.^ORCID,Heimlich Michael C.^ORCID

Abstract

Abstract Single-ended and balanced 90–120 GHz microstrip power amplifier MMICs have been designed for cost-sensitive 5G and 6G backhaul in a commercial 6-inch, 0.1-µm GaAs process. At 108 GHz, measured output power is 20.4 and 22.5 dBm, respectively. At 120 GHz, measured output is 12.6 and 17.4 dBm, respectively. This is the highest reported for GaAs, among the highest reported to date for microstrip MMIC amplifiers at these frequencies and competitive with more expensive InP and GaN processes. Measurement is compared with simulation.

Publisher

Cambridge University Press (CUP)

Subject

Electrical and Electronic Engineering

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