Pulse characterization of trapping and thermal effects of microwave GaN power FETs-Reference-Cited by-同舟云学术

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Pulse characterization of trapping and thermal effects of microwave GaN power FETs

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Container-title:2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157)
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Author:

Augaudy S.,Quere R.,Teyssier J.P.,Di Forte-Poisson M.A.,Cassette S.,Dessertenne B.,Delage S.L.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/7643/20869/00966922.pdf?arnumber=966922

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Room-Temperature Organic Passivation for GaN-on-Si HEMTs With Improved Device Stability;IEEE Transactions on Electron Devices;2023

2. GaN Characterization Method Towards Linearizability Prediction;2022 IEEE/MTT-S International Microwave Symposium - IMS 2022;2022-06-19

3. Effect of heavy ion irradiation on the interface traps of AlGaN/GaN High Electron Mobility Transistors;Chinese Physics B;2021-07-07

4. Nonlinear Embedding and De-embedding;Microwave De-embedding;2014

5. Characterization of the Nonlinear Thermal Resistance and Pulsed Thermal Dynamic Behavior of AlGaN–GaN HEMTs on SiC;IEEE Transactions on Microwave Theory and Techniques;2013-05

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