First Full W-Band GaN Power Amplifier MMICs with Novel Broadband Radial Stubs and 50 GHz of Bandwidth
Author:
Affiliation:
1. Fraunhofer Institute for Applied Solid State Physics IAF, Freiburg, Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8417183/8439129/08439170.pdf?arnumber=8439170
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A 60-GHz 27.8-dBm GaN-based Doherty Power Amplifier for V-band Applications;2023 Asia-Pacific Microwave Conference (APMC);2023-12-05
2. A 100GHz-band GaN Transmitter Module with Triple-Multiplier for Beyond 5G;2023 Asia-Pacific Microwave Conference (APMC);2023-12-05
3. A 24.2dBm Full W band GaN Power Amplifier with about 40GHz of Bandwidth;2021 IEEE MTT-S International Wireless Symposium (IWS);2021-05-23
4. Full W-Band GaN Power Amplifier MMICs Using a Novel Type of Broadband Radial Stub;IEEE Transactions on Microwave Theory and Techniques;2018-12
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