Modulation-doped double-barrier quantum well infrared detectors for photovoltaic operation in 3-5 μm-Reference-Cited by-同舟云学术

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Modulation-doped double-barrier quantum well infrared detectors for photovoltaic operation in 3-5 μm

Published:2003-01 Issue:1 Volume:15 Page:105-107
ISSN:1041-1135
Container-title:IEEE Photonics Technology Letters
language:
Short-container-title:IEEE Photon. Technol. Lett.

Author:

Luna E.,Sanchez-Rojas J.L.,Guzman A.,Tijero J.M.G.,Munoz E.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/68/25970/01159077.pdf?arnumber=1159077

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design and implementation of bound-to-quasibound GaN/AlGaN photovoltaic quantum well infrared photodetectors operating in the short wavelength infrared range at room temperature;Journal of Applied Physics;2019-05-07

2. Linear and nonlinear optical absorption coefficients and refractive index changes in modulation-doped quantum wells: Effects of the magnetic field and hydrostatic pressure;Physica B: Condensed Matter;2013-11

3. A Photovoltaic InAs Quantum-Dot Infrared Photodetector;Chinese Physics Letters;2010-04

4. High performance quantum dot-quantum well infrared focal plane arrays;SPIE Proceedings;2010-02-11

5. GaAsN/AlAs/AlGaAs double barrier quantum wells grown by molecular beam epitaxy as an alternative to infrared absorption below 4 μm;Infrared Physics & Technology;2003-10

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