An 18.6-dBm, 8-Way-Combined D-Band Power Amplifier with 21.6% PAE in 22-nm FD-SOI CMOS
Author:
Affiliation:
1. Samsung Semiconductor, Inc.,San Jose,USA
2. University of California,Department of Electrical and Computer Engineering,Santa Barbara,USA
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10310176/10310665/10310692.pdf?arnumber=10310692
Reference16 articles.
1. A 112-142GHz Power Amplifier with Regenerative Reactive Feedback achieving 17dBm peak Psat at 13% PAE
2. A 110–134-GHz SiGe Amplifier With Peak Output Power of 100–120 mW
3. Millimeter-Wave CMOS Power Amplifiers With High Output Power and Wideband Performances
4. Compact Series Power Combining Using Subquarter-Wavelength Baluns in Silicon Germanium at 120 GHz
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1. A D-Band Power Amplifier with Optimized Common-Mode Behaviour Achieving 32Gb/s in 22-nm FD-SOI;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16
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