A 4.8dB NF, 70-to-86GHz Deep-Noise-Canceling LNA Using Asymmetric Compensation Transformer and 4-to-1 Hybrid-Phase Combiner in 40nm CMOS
Author:
Affiliation:
1. University of Electronic Science and Technology of China,Chengdu,China
Funder
National Natural Science Foundation of China
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10067248/10067251/10067549.pdf?arnumber=10067549
Reference6 articles.
1. A Transformer Feedback ${G}_{m}$ -Boosting Technique for Gain Improvement and Noise Reduction in mm-Wave Cascode LNAs
2. A 68.1-to-96.4GHz Variable-Gain Low-Noise Amplifier in 28nm CMOS;vigilante;ISSCC,2016
3. Design of E- and W-Band Low-Noise Amplifiers in 22-nm CMOS FD-SOI
4. Pole-Converging Intrastage Bandwidth Extension Technique for Wideband Amplifiers
5. 4.2 An E-Band High-Linearity Antenna-LNA Front-End with 4.8dB NF and 2.2dBm IIP3 Exploiting Multi-Feed On-Antenna Noise-Canceling and Gm-Boosting
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1. A 22–33-GHz Gm -Boosting Low-Power Noise-Canceling LNA in 40-nm CMOS Process;IEEE Transactions on Microwave Theory and Techniques;2024-07
2. A 200 GHz Wideband and Compact Differential LNA Leveraging an Active Balun Input Stage in 16nm FinFET Technology;2024 IEEE Radio Frequency Integrated Circuits Symposium (RFIC);2024-06-16
3. A 58–110 GHz 4.2 dB Minimum NF CMOS LNA With Broadband Simultaneous Noise and Impedance Matching;IEEE Microwave and Wireless Technology Letters;2024-05
4. A 52–73-GHz LNA With Tri-Coupled Transformer for G m Boosting and Enhanced Noise Canceling;IEEE Journal of Solid-State Circuits;2024-03
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