A 20-Gb/s/pin 0.0024-mm2 Single-Ended DECS TRX with CDR-less Self-Slicing/Auto-Deserialization to Improve Tolerance on Duty Cycle Error and RX Supply Noise for DCC/CDR-less Short-Reach Memory Interfaces
Author:
Affiliation:
1. Pohang University of Science and Technology,Pohang,Korea
2. Samsung Electronics,Hwaseong,Korea
Funder
Korea government (MSIT)
Samsung Electronics Co., Ltd
POSTECH
IDEC
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9731529/9731102/09731763.pdf?arnumber=9731763
Reference5 articles.
1. 11.1 A 1.7pJ/b 112Gb/s XSR Transceiver for Intra-Package Communication in 7nm FinFET Technology
2. 11.3 A 480Gb/s/mm 1.7pJ/b Short-Reach Wireline Transceiver Using Single-Ended NRZ for Die-to-Die Applications
3. A 7nm 0.46pJ/bit 20Gbps with BER 1E-25 Die-to-Die Link Using Minimum Intrinsic Auto Alignment and Noise-Immunity Encode
4. A 1.17pJ/b 25Gb/s/pin ground-referenced single-ended serial link for off- and on-package communication in 16nm CMOS using a process- and temperature-adaptive voltage regulator
5. A 7.8Gb/s/pin 1.96pJ/b compact single-ended TRX and CDR with phase-difference modulation for highly reflective memory interfaces
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A 20-Gb/s/Pin Compact Single-Ended DCC-Less DECS Transceiver With CDR-Less RX Front-End for On-Chip Links;IEEE Journal of Solid-State Circuits;2023-11
2. A 0.17 pJ/bit 28 Gb/s/pin Single-Ended PAM-4 Transmitter for On-Chip Short-Reach Unterminated Channels;Electronics;2022-08-12
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