600-GHz High-Power Signal Sources Based on 250-nm InP HBT Technology
Author:
Affiliation:
1. School of Electrical Engineering, Korea University, Seoul, South Korea
2. Telecommunications Research Institute, Daejeon, South Korea
3. Samsung Electronics, Hwaseong-si, South Korea
Funder
Institute of Information and Communications Technology Planning and Evaluation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Radiation
Link
http://xplorestaging.ieee.org/ielx7/5503871/9942281/09868113.pdf?arnumber=9868113
Reference37 articles.
1. Evaluation of the factors determining HBT high-frequency performance by direct analysis of S-parameter data
2. A self-consistent method for complete small-signal parameter extraction of InP-based heterojunction bipolar transistors (HBT's)
3. Direct parameter-extraction method for HBT small-signal model
4. High-Power Radiation at 1 THz in Silicon: A Fully Scalable Array Using a Multi-Functional Radiating Mesh Structure
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1. THz Monolithic Integrated Circuits Operating Beyond 500 GHz;2023 Asia-Pacific Microwave Conference (APMC);2023-12-05
2. A 700 GHz Integrated Signal Source Based on 130 nm InP HBT Technology;IEEE Transactions on Terahertz Science and Technology;2023-11
3. Investigation of RTD THz Oscillator with Wide Frequency Tuning Capability;2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz);2023-09-17
4. Terahertz On-Chip Aperture Antenna With Through Substrate Vias for Enhanced Gain and Chip-Size Insensitivity in InP Technology;IEEE Transactions on Antennas and Propagation;2023-09
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