THz Monolithic Integrated Circuits Operating Beyond 500 GHz-Reference-Cited by-同舟云学术

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THz Monolithic Integrated Circuits Operating Beyond 500 GHz

Published:2023-12-05 Issue: Volume: Page:479-481
ISSN:
Container-title:2023 Asia-Pacific Microwave Conference (APMC)
language:
Short-container-title:

Author:

Rieh Jae-Sung¹,Son Heekang²,Kim Jungsoo³,Yun Jongwon⁴,Cho Minje⁵,Kim Doyoon⁴

Affiliation:

1. Korea University,School of Electrical Engineering,Seoul,Korea

2. Samsung Research Samsung Electronics,Seoul,Korea

3. Electronics and Telecommunications Research Institute (ETRI),Daejeon,Korea

4. System LSI Business Samsung Electronics,Gyeonggi,Korea

5. Analog Team Anapass,Seoul,Korea

Funder

National Research Foundation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10439662/10439663/10439749.pdf?arnumber=10439749

Reference11 articles.

1. Introduction to Terahertz Electronics

2. A Broadband 300 GHz Power Amplifier in a 130 nm SiGe BiCMOS Technology for Communication Applications

3. First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process

4. Intel 22nm FinFET (22FFL) Process Technology for RF and mm Wave Applications and Circuit Design Optimization for FinFET Technology

5. SiGe HBT with fx/fmax of 505 GHz/720 GHz

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