Device and Compact Circuit-Level Modeling of Graphene Field-Effect Transistors for RF and Microwave Applications
Author:
Funder
National Natural Science Foundation of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/8919/8402068/08290577.pdf?arnumber=8290577
Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A novel design of graphene field-effect transistor-based out-phasing power amplifier;Journal of Computational Electronics;2023-07-04
2. Compact Modeling Technology for the Simulation of Integrated Circuits Based on Graphene Field‐Effect Transistors;Advanced Materials;2022-11-07
3. Towards RF graphene devices: A review;FlatChem;2022-09
4. Graphene nanoribbon field effect transistors analysis and applications;Superlattices and Microstructures;2021-05
5. A Small-Signal GFET Equivalent Circuit Considering an Explicit Contribution of Contact Resistances;IEEE Microwave and Wireless Components Letters;2021-01
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