Record 7(N)+7(P) Multiple V<sub>T</sub>s Demonstration on GAA Si Nanosheet n/pFETs using WFM-Less Direct Interfacial La/Al-Dipole Technique-Reference-Cited by-同舟云学术

Record 7(N)+7(P) Multiple V_Ts Demonstration on GAA Si Nanosheet n/pFETs using WFM-Less Direct Interfacial La/Al-Dipole Technique

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
language:
Short-container-title:

Author:

Yao Jiaxin¹,Wei Yanzhao¹,Yang Shuai¹,Yang Hong¹,Xu Gaobo¹,Zhang Yadong¹,Cao Lei¹,Zhang Xuexiang¹,Liu Qianqian¹,Wu Zhenhua¹,Yin Huaxiang¹,Zhang Qingzhu¹,Li Junfeng¹,Luo Jun¹

Affiliation:

1. Institute of Microelectronics, Chinese Academy of Sciences,Integrated Circuit Advanced Process R&D Center,Beijing,China

Funder

Chinese Academy of Sciences

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019361.pdf?arnumber=10019361

Reference9 articles.

1. Controlling Threshold Voltage of CMOS SOI Nanowire FETs With Sub-1 nm Dipole Layers Formed by Atomic Layer Deposition

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