3-Layer Stacked Voltage-Domain Global Shutter CMOS Image Sensor with 1.8μm-Pixel-Pitch-Reference-Cited by-同舟云学术

3-Layer Stacked Voltage-Domain Global Shutter CMOS Image Sensor with 1.8μm-Pixel-Pitch

Published:2022-12-03 Issue: Volume: Page:
ISSN:
Container-title:2022 International Electron Devices Meeting (IEDM)
language:
Short-container-title:

Author:

Kim Seung-Sik¹,Lee Gwi-Deok Ryan¹,Park Sang-Su¹,Shim Heesung¹,Kim Dae-Hoon¹,Choi Minjun¹,Kim Sangyoon¹,Park Gyunha¹,Oh Seung-Jae¹,Moon Joosung¹,Park Sungbong¹,Yoon Sol¹,Jeong Jihye¹,Park Sejin¹,Lee Sanggwon¹,Lee HaeJung¹,Ryu Wonoh¹,Kim Taehyoung¹,Kwon Doowon¹,Choi Hyuk Soon¹,Kim Hongki¹,Go Jonghyun¹,Kim JinGyun¹,Lim Seunghyun¹,Na HoonJoo¹,Lee Jae-Kyu¹,Moon Chang-Rok¹,Song Jaihyuk¹

Affiliation:

1. Samsung Electronics,Hwaseong,Korea

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019515.pdf?arnumber=10019515

Reference5 articles.

1. A 1.8e $^{-}_{\mathrm {rms}} $ Temporal Noise Over 110-dB-Dynamic Range 3.4 $\mu \text{m}$ Pixel Pitch Global-Shutter CMOS Image Sensor With Dual-Gain Amplifiers SS-ADC, Light Guide Structure, and Multiple-Accumulation Shutter

2. A 2.2?m stacked back side illuminated voltage domain global shutter CMOS image sensor;park;IEEE IEDM,2019

3. A 1/4-inch 8Mpixel CMOS Image Sensor with 3D Backside Illuminated 1.12?m Pixel with Front-Side Deep-Trench Isolation and Vertical Transfer Gate;ahn;IEEE ISSCC,2014

4. A 2.1e-Temporal Noise and -105dB Parasitic Light Sensitivity Backside-Illuminated 2.3?m-Pixel Voltage-Domain Global Shutter CMOS Image Sensor Using High-Capacity DRAM Capacitor Technology;lee;IEEE ISSCC,2020

5. Back-Illuminated $2.74 \ \mu \mathrm{m}$-Pixel-Pitch Global Shutter CMOS Image Sensor with Charge-Domain Memory Achieving 10k e-Saturation Signal

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. 2.16µm Back Side Illuminated Voltage Domain Global Shutter CMOS Image Sensor with single silicon layer pixel;2023 International Electron Devices Meeting (IEDM);2023-12-09

2. A 2.2μm 2-Layer Stacked HDR Voltage Domain Global Shutter CMOS Image Sensor with Dual Conversion Gain and 1.2e- FPN;2023 International Electron Devices Meeting (IEDM);2023-12-09

3. A 0.5 MP, 3D-Stacked, Voltage-Domain Global Shutter Image Sensor with NIR QE Enhancement, Event Detection Modes, and 90 dB Dynamic Range;Sensors;2023-11-27