25 nm iPMA-type Hexa-MTJ with solder reflow capability and endurance > 107 for eFlash-type MRAM
Author:
Affiliation:
1. Tohoku University,Center for Innovative Integrated Electronic Systems,Sendai,Japan,980-8572
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10019319/10019320/10019412.pdf?arnumber=10019412
Reference18 articles.
1. Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM With 10-ns Low Power Write Operation, 10 Years Retention and Endurance > 10¹¹
2. Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions
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1. Single-nanometer CoFeB/MgO magnetic tunnel junctions with high-retention and high-speed capabilities;npj Spintronics;2024-01-04
2. Comprehensive Modeling of Advanced Composite Magnetoresistive Devices;ESSDERC 2023 - IEEE 53rd European Solid-State Device Research Conference (ESSDERC);2023-09-11
3. Multi-level Operation in Ultra-scaled MRAM;2023 IEEE Latin American Electron Devices Conference (LAEDC);2023-07-03
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