The Effect of Ion Implantation on Oxide Charge Storage in MOS Devices-Reference-Cited by-同舟云学术

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The Effect of Ion Implantation on Oxide Charge Storage in MOS Devices

Published:1975 Issue:6 Volume:22 Page:2168-2173
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Wang S. T.,Royce B. S. H.,Russell T. J.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx5/23/4328085/04328099.pdf?arnumber=4328099

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Concise Numerical TID Radiation Model for n-MOSFET with Nano-Scaled LOCOS Isolation Under Zero Gate Bias;Nanoscience and Nanotechnology Letters;2014-09-01

2. Problems of Radiation Hardness of SOI Structures and Devices;Physical and Technical Problems of SOI Structures and Devices;1995

3. Oxide charge accumulation in metal oxide semiconductor devices during irradiation;Journal of Applied Physics;1991-05-15

4. Radiation effects on ion-implanted silicon-dioxide films;IEEE Transactions on Nuclear Science;1989-12

5. Radiation effects on p/sup +/ poly gate MOS structures with thin oxides;IEEE Transactions on Nuclear Science;1989-12

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