Updated technology of ion implantation applicable low-temperature poly-Si TFT process
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Publisher
IEEE
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Performance and reliability enhancement of flexible low-temperature polycrystalline silicon thin-film transistors via activation-annealing temperature optimization;Thin Solid Films;2023-09
2. Effects of Source/Drain Activation on Channel-Length for Excimer-Laser-Crystallized Poly-Si Thin-Film Transistors;Electrochemical and Solid-State Letters;2006-02-01
3. Incomplete Laser Annealing of Ion Doping Damage at Source/Drain Junctions of Poly-Si Thin-Film Transistors;Electrochemical and Solid-State Letters;2004
4. Optimization of low-temperature poly-Si TFT-LCDs and a large-scale production line for large glass substrates;Journal of the Society for Information Display;2001-09
5. 50.1: Invited Paper: Future Application Potential of Low Temperature p-Si TFT LCD Displays;SID Symposium Digest of Technical Papers;2001
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