Compact Behavioral Modeling and Time Dependent Performance Degradation Analysis of Junction and Doping Free Transistors-Reference-Cited by-同舟云学术

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Compact Behavioral Modeling and Time Dependent Performance Degradation Analysis of Junction and Doping Free Transistors

Published:2016-12 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE International Symposium on Nanoelectronic and Information Systems (iNIS)
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Author:

Panchore Meena,Singh Jawar,Mohanty Saraju P.,Kougianos Elias

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7827705/7829498/07829550.pdf?arnumber=7829550

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design of Radiation Hardened SRAM Cell using Dopingless Transistor for Space Applications;Journal of Electrical Engineering & Technology;2024-03-26

2. A highly sensitive MOSFET gas sensor based on charge plasma and catalytic metal gate;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-11-15

3. High speed ultra-low-lower lulse-triggered JLFET Flip-Flop;Modern Physics Letters B;2023-10-19

4. Aging Mechanism of p-Type Dopingless JLFET: NBTI and Channel-Hot-Carrier Stress;Transactions on Electrical and Electronic Materials;2022-12-31

5. Comparative Performance and Reliability Analysis of Doping and Junction Free Devices with High-κ/Vacuum Gate Dielectric;Silicon;2021-08-02

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