A new VDMOSFET structure with reduced reverse transfer capacitance
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx1/16/1331/00030945.pdf?arnumber=30945
Cited by 19 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. 1.2 kV SiC MOSFETs with tapered buffer oxide for the suppression of the electric field crowding effect;Japanese Journal of Applied Physics;2023-11-01
2. Theoretical Analysis and Experimental Characterization of 1.2-kV 4H-SiC Planar Split-Gate MOSFET With Source Field Plate;IEEE Transactions on Electron Devices;2023
3. 1.2‐kV silicon carbide planar split‐gate MOSFET with source field plate for superior figure‐of‐merits;IET Power Electronics;2022-05-28
4. Low Switching Loss Split-Gate 4H-SiC MOSFET With Integrated Heterojunction Diode;IEEE Journal of the Electron Devices Society;2022
5. A 1.2 kV SiC MOSFET with Integrated Heterojunction Diode and P-shield Region;Energies;2021-12-20
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