Transient Response of ESD Protection Devices for a High-Speed I/O Interface
Author:
Affiliation:
1. EMC Laboratory, Missouri University of Science and Technology, Rolla, MO, USA
2. Nexperia Germany GmbH, Hamburg, Germany
3. Amazon Lab126, Sunnyvale, CA, USA
4. Graz University of Technology, Graz, Austria
Funder
National Science Foundation
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics
Link
https://ieeexplore.ieee.org/ielam/15/9857964/9789542-aam.pdf
Reference16 articles.
1. Efficient calculation of ESD inductive coupling on a conductor loop using PEEC method
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3. Transient Analysis of ESD Protection Circuits for High-Speed ICs
4. An application of system level efficient ESD design for high speed USB3.x interface;wei;Proc Elect Overstress/Electrost Discharge Symp,2018
5. TVS devicestransient behavior modeling framework and application to SEED;shen;Proc Electrical Overstress/Electrostatic Discharge Symp,2019
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