Impacts of Embedded SCR/Schottky Parasitic on ESD Reliability in the Drain End of High Voltage nLDMOS Devices-Reference-Cited by-同舟云学术

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Impacts of Embedded SCR/Schottky Parasitic on ESD Reliability in the Drain End of High Voltage nLDMOS Devices

Published:2023-10-27 Issue: Volume: Page:208-211
ISSN:
Container-title:2023 IEEE 5th Eurasia Conference on IOT, Communication and Engineering (ECICE)
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Author:

Lin Ting-En¹,Chen Shen-Li¹,Liu Zhi-Wei¹,Yang Xiu-Yuan¹

Affiliation:

1. National United University,Department of Electronic Engineering,Miaoli,Taiwan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10382605/10382606/10382987.pdf?arnumber=10382987

Reference7 articles.

1. Transient Response of ESD Protection Devices for a High-Speed I/O Interface

2. Design of Bi-Directional ESD Protection Circuit With Uni-Directional ESD Device in BCD Technology

3. Experimental Realization of Ultralow ON-Resistance LDMOS With Optimized Layout

4. Algorithmic Optimization of Transistors Applied to Silicon LDMOS

5. Area-Efficient Silicon Carbide SCR Device for On-Chip ESD Protection

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