High-resolution projection lithography for MEMS-applications using thick photoresist AZ 10XT
Author:
Affiliation:
1. Fraunhofer ENAS,Chemnitz,Germany
2. University of Technology,Fraunhofer ENAS & Chemnitz,Chemnitz,Germany
3. Chemnitz University of Technology,Chemnitz,Germany
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9901388/9901406/09901437.pdf?arnumber=9901437
Reference6 articles.
1. Cyclic Etch/Passivation-Deposition as an All-Spatial Concept toward High-Rate Room Temperature Atomic Layer Etching
2. Effects of deep reactive ion etching paramters on etching rate and surface morphology in extremly deep silicon etch process with high aspect ratio;xu;Advanced in Machanical Engineerig,2017
3. Effect of Alternating Ar and SF6/C4F8 Gas Flow in Si Nano-Structure Plasma Ecthing;chen;National Institute of Standards and Technology,2011
4. Wafer-level integration of self-aligned high aspect ratio silicon 3D structures using the MACE method with Au, Pd, Pt, Cu, and Ir
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