On the physical interpretation of the impact damage model in TDDB of low-k dielectrics
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx5/5482567/5488659/05488700.pdf?arnumber=5488700
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Physical model for the frequency dependence of time-dependent dielectric breakdown (TDDB);AIP Advances;2023-05-01
2. A transport model describing how defect accumulation leads to intrinsic dielectric breakdown and post-breakdown conduction;Microelectronics Reliability;2022-01
3. Impact of Anode-side Defect Generation on Inter-Level TDDB Degradation in Cu/Low-k Damascene Structures;2020 IEEE International Reliability Physics Symposium (IRPS);2020-04
4. Charge transport model to predict dielectric breakdown as a function of voltage, temperature, and thickness;Microelectronics Reliability;2018-12
5. Charge transport model to predict intrinsic reliability for dielectric materials;Journal of Applied Physics;2015-09-28
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