Gate Oxide Reliability Studies of Commercial 1.2 kV 4H-SiC Power MOSFETs-Reference-Cited by-同舟云学术

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Gate Oxide Reliability Studies of Commercial 1.2 kV 4H-SiC Power MOSFETs

Published:2020-04 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Liu Tianshi,Zhu Shengnan,Yu Susanna,Xing Diang,Salemi Arash,Kang Minseok,Booth Kristen,White Marvin H.,Agarwal Anant K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9125439/9128217/09129486.pdf?arnumber=9129486

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physics-Based Strategies for Fast TDDB Testing and Lifetime Estimation in SiC Power MOSFETs;IEEE Transactions on Industrial Electronics;2024-05

2. 4H-SiC MOSFET Threshold Voltage Instability Evaluated via Pulsed High-Temperature Reverse Bias and Negative Gate Bias Stresses;Materials;2024-04-20

3. On the Intrinsic and Extrinsic Reliability Challenges of SiC MOSFETs;2024 IEEE International Reliability Physics Symposium (IRPS);2024-04-14

4. Review and Outlook on GaN and SiC Power Devices: Industrial State-of-the-Art, Applications, and Perspectives;IEEE Transactions on Electron Devices;2024-03

5. Investigation of the time dependent gate dielectric stability in SiC MOSFETs with planar and trench gate structures;Microelectronics Reliability;2023-11

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