On the impact of mechanical stress on gate oxide trapping-Reference-Cited by-同舟云学术

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On the impact of mechanical stress on gate oxide trapping

Published:2020-04 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Kruv A.,Kaczer B.,Grill A,Gonzalez M.,Franco J.,Linten D.,Goes W.,Grasser T.,De Wolf I.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9125439/9128217/09129541.pdf?arnumber=9129541

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Cylindrical Indentation to Selectively Stress Nanoscale CMOS Transistors;IEEE Transactions on Device and Materials Reliability;2022-09

2. Impact of Externally Induced Local Mechanical Stress on Electrical Performance of Decananometer MOSFETs;IEEE Transactions on Electron Devices;2022-09

3. Gate-Induced-Drain-Leakage (GIDL) in CMOS Enhanced by Mechanical Stress;IEEE Transactions on Electron Devices;2022-04

4. Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical Stress;2022 IEEE International Reliability Physics Symposium (IRPS);2022-03

5. Hot-Electron-Induced Punch-Through (HEIP) Effect in p-MOSFET Enhanced by Mechanical Stress;IEEE Electron Device Letters;2021-10

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