Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling-Reference-Cited by-同舟云学术

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Reliability Physics of GaN HEMT Microwave Devices: The Age of Scaling

Published:2020-04 Issue: Volume: Page:
ISSN:
Container-title:2020 IEEE International Reliability Physics Symposium (IRPS)
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Author:

Zanoni Enrico,Meneghini Matteo,Meneghesso Gaudenzio,Rampazzo Fabiana,Marcon Daniele,Zhan Veronica Gao,Chiocchetta Francesca,Graff Andreas,Altmann Frank,Simon-Najasek Michel,Poppitz David

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9125439/9128217/09128358.pdf?arnumber=9128358

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Synergistic effects of heating and biasing of AlGaN/GaN high electron mobility transistors: An in-situ transmission electron microscopy study;Microelectronics Reliability;2024-09

2. Investigation of the role of pre-existing oxide in the initial degradation mechanism in AlGaN/GaN HEMTs under ON-state stress;Microelectronics Reliability;2023-11

3. Thermally-activated failure mechanisms of 0.25 \ \mu \mathrm{m}$ RF AIGaN/GaN HEMTs submitted to long-term life tests;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

4. Failure Physics and Reliability of GaN‐Based HEMTs for Microwave and Millimeter‐Wave Applications: A Review of Consolidated Data and Recent Results;physica status solidi (a);2022-11-19

5. Emerging Device Architectures for Space Electronics;HEMT Technology and Applications;2022-06-24

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