Suppression of parasitic bipolar effects and off-state leakage in fully-depleted SOI n-MOSFET's using Ge-implantation-Reference-Cited by-同舟云学术

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Suppression of parasitic bipolar effects and off-state leakage in fully-depleted SOI n-MOSFET's using Ge-implantation

Published:1995 Issue:12 Volume:42 Page:2096-2103
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Hua-Fang Wei ,Chung J.E.,Kalkhoran N.M.,Namavar F.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx3/16/10169/00477766.pdf?arnumber=477766

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement in off-State Leakage Current of n-Channel SOS MOSFETs by Hydrogen Annealing of the SOS Film;IEEE Transactions on Electron Devices;2011-11

2. The Characteristics of n- and p-Channel Poly-Si Thin-Film Transistors with Fully Ni-Salicided S/D and Gate Structure;Journal of The Electrochemical Society;2010

3. High-performance poly-Si TFTs with fully Ni-self-aligned silicided S/D and gate structure;IEEE Electron Device Letters;2006-04

4. Suppression of the Floating-Body Effect in Poly-Si Thin-Film Transistors With Self-Aligned Schottky Barrier Source and Ohmic Body Contact Structure;IEEE Electron Device Letters;2004-09

5. Silicon Devices and Circuits;Low Temperature Electronics;2001

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