The Characteristics of n- and p-Channel Poly-Si Thin-Film Transistors with Fully Ni-Salicided S/D and Gate Structure-Reference-Cited by-同舟云学术

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The Characteristics of n- and p-Channel Poly-Si Thin-Film Transistors with Fully Ni-Salicided S/D and Gate Structure

Published:2010 Issue:1 Volume:157 Page:H113
ISSN:0013-4651
Container-title:Journal of The Electrochemical Society
language:en
Short-container-title:J. Electrochem. Soc.

Author:

Kuo Po-Yi,Huang Yan-Syue,Lue Yi-Hsien,Chao Tien-Sheng,Lei Tan-Fu

Publisher

The Electrochemical Society

Subject

Materials Chemistry,Electrochemistry,Surfaces, Coatings and Films,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. A. J. Walker, S. Nallamothu, E. H. Chen, M. Mahajani, S. B. Herner, M. Clark, J. M. Cleeves, S. V. Dunton, V. L. Eckert, J. Gu, et al. , inSymposium on VLSI Technology, Digest of Technical Papers, pp. 29–30 (2003).

2. T. Shimoda, H. Ohshima, S. Miyashita, M. Kimura, T. Ozawa, I. Yudasaka, H. Kobayashi, R. H. Friend, J. H. Burroughes, and C. R. Towns , inProceedings of the Asian Symposium on Information Display, p. 217 (1998).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High-Performance Poly-Si Thin-Film Transistors With L-Fin Channels;IEEE Electron Device Letters;2012-02

2. Novel Sub-10-nm Gate-All-Around Si Nanowire Channel Poly-Si TFTs With Raised Source/Drain;IEEE Electron Device Letters;2011-02

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