Effect of Transistor Density and Charge Sharing on Single-Event Transients in 90-nm Bulk CMOS-Reference-Cited by-同舟云学术

Effect of Transistor Density and Charge Sharing on Single-Event Transients in 90-nm Bulk CMOS

Published:2011-12 Issue:6 Volume:58 Page:2578-2584
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Atkinson Nicholas M.,Ahlbin Jonathan R.,Witulski Arthur F.,Gaspard Nelson J.,Holman W. Timothy,Bhuva Bharat L.,Zhang Enxia X.,Chen Li,Massengill Lloyd W.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx5/23/6093861/06044737.pdf?arnumber=6044737

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