Proposal of Single Metal/Dual High-$k$ Devices for Aggressively Scaled CMISFETs With Precise Gate Profile Control-Reference-Cited by-同舟云学术

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Proposal of Single Metal/Dual High-$k$ Devices for Aggressively Scaled CMISFETs With Precise Gate Profile Control

Published:2009-01 Issue:1 Volume:56 Page:85-92
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Mise N.,Morooka T.,Eimori T.,Ono T.,Sato M.,Kamiyama S.,Nara Y.,Ohji Y.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4723893/04717273.pdf?arnumber=4717273

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Realizing improved performance of metal-insulator-semiconductor diodes with high-k MgO/SiOx stack;Journal of Alloys and Compounds;2023-10

2. Polymer electro-optic modulator efficiency enhancement by the high permittivity dielectric strips;Photonics and Nanostructures - Fundamentals and Applications;2017-07

3. Study of a Negative Threshold Voltage Shift in Positive Bias Temperature Instability and a Positive Threshold Voltage Shift the Negative Bias Temperature Instability of Yttrium-Doped HfO2Gate Dielectrics;Japanese Journal of Applied Physics;2010-04-20

4. (Invited) Negatively Charged Defects Generated by Rare-Earth Materials Incorporation into HfO2 and the Impact on the Gate Dielectrics Reliability;ECS Transactions;2010-04-16

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