Enhancement of the Flatband Modulation of Ni-Silicided Gates on Hf-Based Dielectrics-Reference-Cited by-同舟云学术

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Enhancement of the Flatband Modulation of Ni-Silicided Gates on Hf-Based Dielectrics

Published:2008-08 Issue:8 Volume:55 Page:2238-2245
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yang Jian-Jun,Wang Xin-Peng,Zhu Chun-Xiang,Li Ming-Fu,Yu Hong-Yu,Loh Wei-Yip,Kwong Dim-Lee

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4578833/04578897.pdf?arnumber=4578897

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Properties of a Ni-FUSI gate formed by the EBV method and one-step RTA;Journal of Semiconductors;2012-03

2. Some issues in advanced CMOS gate stack performance and reliability;Microelectronic Engineering;2011-12

3. A Cost-Effective $\hbox{Ni/Nb}_{2}\hbox{O}_{5}\hbox{/} \hbox{Al}_{2}\hbox{O}_{3}\hbox{/}\hbox{Ni}_{2}\hbox{Si}$ Metal–Insulator–Metal Capacitor Processed at 300 $^{\circ}\hbox{C}$ Using Laser Annealing and a Fully Silicided Amorphous Silicon Bottom Electrode;IEEE Transactions on Electron Devices;2011-11

4. A New Cost-Effective Metal–Insulator–Metal Capacitor Processed at 350 $^{\circ}\hbox{C}$ Using $ \hbox{Ni}_{2}\hbox{Si}$ Fully Silicided Amorphous Silicon Electrodes;IEEE Transactions on Electron Devices;2011-03

5. A New Metal–Insulator–Metal Capacitor with Nickel Fully Silicided Polycrystalline Silicon Electrodes;Japanese Journal of Applied Physics;2010-09-21

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