Dual-Material-Gate Technique for Enhanced Transconductance and Breakdown Voltage of Trench Power MOSFETs-Reference-Cited by-同舟云学术

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Dual-Material-Gate Technique for Enhanced Transconductance and Breakdown Voltage of Trench Power MOSFETs

Published:2009-03 Issue:3 Volume:56 Page:517-522
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Saxena Raghvendra S.,Kumar M. Jagadesh

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4787257/04781546.pdf?arnumber=4781546

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