Metrology for the Electrical Characterization of Semiconductor Nanowires-Reference-Cited by-同舟云学术

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Metrology for the Electrical Characterization of Semiconductor Nanowires

Published:2008-11 Issue:11 Volume:55 Page:3086-3095
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Richter Curt A.,Xiong Hao D.,Zhu Xiaoxiao,Wang Wenyong,Stanford Vincent M.,Hong Woong-Ki,Lee Takhee,Ioannou Dimitris E.,Li Qiliang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/4668541/04668556.pdf?arnumber=4668556

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. N-slit quantum interferometers in the nanometer domain;Applied Physics B;2023-05-09

2. Comparative Performance Analysis of Nanowire and Nanotube Field Effect Transistors;Advances in Computer and Electrical Engineering;2021

3. Toward a metrological calibration of the conversion efficiency in GaAs nanowire-based photodetectors;Journal of Materials Research;2017-07

4. Simulation of Electrical Characteristics of Silicon and Germanium Nanowires Progressively Doped to Zener Diode Configuration Using First Principle Calculations;Lecture Notes in Electrical Engineering;2015-12-25

5. Gate assisted Kelvin test structure to measure the electron and hole flows at the same nanowire contacts;Applied Physics Letters;2014-09-29

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